MAX1951ESA

Product Summary

The MAX1951ESA high-efficiency, DC-to-DC step-down switching regulator delivers up to 1.5A of output current. The device operates from an input voltage range of 2.6V to 5.5V and provides an output voltage from 0.8V to VIN, making the MAX1951ESA ideal for on-board postregulation applications. The MAX1951ESA total output error is less than 1% over load, line, and temperature. The MAX1951 operates at a fixed frequency of 1MHz with an efficiency of up to 94%. The high operating frequency minimizes the size of external components. Internal soft-start control circuitry reduces inrush current. Short-circuit and thermal-overload protection improve design reliability. The MAX1951 provides an adjustable output from 0.8V to VIN. The device ia available in a space-saving 8-pin SO package.

Parametrics

Absolute maximum ratings:(1)IN, VCC to GND: -0.3V to +6V; (2)COMP, FB, REF to GND: -0.3V to (VCC + 0.3V); (3)LX to Current (Note 1): ±4.5A; (4)PGND to GND: Internally Connected; (5)Operating Temperature Range: -40°C to +85°C; (6)Junction Temperature Range: -40°C to +150°C; (7)Storage Temperature Range: -65°C to +150°C; (8)Lead Temperature (soldering, 10s): +300°C; (9)Continuous Power Dissipation (TA = +70°C), 8-Pin SO: 976mW; (10)Derates above +70°C, 8-Pin SO: 12.12mW/°C.

Features

Features: (1)Description/Function: 1MHz, All-Ceramic, 2.6V to 5.5V Input,1.5A PWM Step-Down DC-to-DC Regulators; (2)Process: S8 (Standard 0.8 micron silicon gate CMOS); (3)Number of Device Transistors: 2500; (4)Fabrication Location: California, USA; (5)Assembly Location: Philippines or Thailand; (6)Date of Initial Production: September, 2002; (7)Package Type: 8-Pin SO; (8)Lead Frame: Copper; (9)Lead Finish: Solder Plate; (10)Die Attach: Silver-filled Epoxy; (11)Bondwire: Gold (2 mil dia.); (12)Mold Material: Epoxy with silica filler; (13)Assembly Diagram: 05-3501-0029; (14)Flammability Rating: Class UL94-V0; (15)Classification of Moisture Sensitivity; (16)Dimensions: 80 x 90 mils; (17)Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide); (18)Interconnect: Aluminum/Si (Si = 1%); (19)Backside Metallization: None; (20)Minimum Metal Width: 0.8 microns (as drawn); (21)Minimum Metal Spacing: 0.8 microns (as drawn); (22)Bondpad Dimensions: 5 mil. Sq.; (23)Isolation Dielectric: SiO2; (24)Die Separation Method: Wafer Saw.

Diagrams